 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SK2900-01 FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 14,5m 45A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 45 180 30 461.9 60 150 -55 ~ +150 * L=0,304mH, VCC=24V Unit V A A V mJ* W C C - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=60V Tch=25C VGS=0V Tch=125C VGS=30V VDS=0V ID=22.5A VGS=10V ID=22.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V VGS=10V ID=45A RGS=10 Tch=25C L = 100H IF=45A VGS=0V Tch=25C IF=45A VGS=0V -dI/dt=100A/s Tch=25C Min. 60 2,5 Typ. 3 10 0,2 10 12,0 25 2300 910 260 18 55 70 48 1,0 60 0,11 Max. 3,5 500 1,0 100 14,5 3450 1370 390 30 80 120 80 1,5 10 45 Unit V V A mA nA m S pF pF pF ns ns ns ns A V ns C - Thermal Characteristics Item Thermal Resistance R R th(ch-c) th(ch-a) Symbol channel to case channel to ambient Min. Typ. Max. 2,08 75,00 Unit C/W C/W N-channel MOS-FET 60V 14,5m 45A 2SK2900-01 FAP-IIIB Series Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch); ID=22,5A; VGS=10V 60W > Characteristics Typical Output Characteristics ID=f(VDS); 80s pulse test; TC=25C Typical Transfer Characteristics ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C ID [A] 1 RDS(ON) [m] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source On-State-Resistance vs. ID RDS(on)=f(ID); 80s pulse test; TC=25C Typical Forward Transconductance vs. ID gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=10mA; VDS=VGS RDS(ON) [m] gfs [S] 5 VGS(th) [V] 4 6 ID [A] ID [A] Tch [C] Typical Capacitances vs. VDS C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristic VGS=f(Qg); ID=45A; TC=25C Forward Characteristics of Reverse Diode IF=f(VSD); 80s pulse test; Tch=25C C [F] VDS [V] VGS [V] IF [A] 7 8 9 VDS [V] Qg [nC] VSD [V] Maximum Avalanche Energy vs. starting Tch EAV=f(starting Tch): VCC=24V; IAV 45A Safe Operation Area ID=f(VDS): D=0,01, Tc=25C Transient Thermal impedance EAV [mJ] 10 ID [A] 12 Zth(ch-c) [K/W] Zthch=f(t) parameter:D=t/T starting Tch [C] VDS [V] t [s] This specification is subject to change without notice! N-channel MOS-FET 60V 14,5m 45A 2SK2900-01 FAP-IIIB Series Typical Switching Characteristics t=f(ID): VCC = 30V, VGS = 10V, RG = 10 60W > Characteristics t [ns] VSD [V] Power Dissipation PD=f(TC) 125 100 PD / PDmax [%] 75 50 25 0 0 25 50 75 TC [C] 100 125 150 Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch) 120 100 IAV / IAVmax [%] 80 60 40 20 0 0 25 50 75 starting Tch [C] 100 125 150 This specification is subject to change without notice! |
Price & Availability of 2SK2900-01
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |